Electron–polar optical phonon scattering suppression and mobility enhancement in wurtzite heterostructures

We have shown theoretically that the electron mobility in wurtzite AlN/GaN/AlN heterostructures can be enhanced by compensating the built-in electric field with the externally applied perpendicular electric field and by introducing a shallow InxGa1-xN channel in the center of GaN potential well. It was found that twoto fivefold increase of the room temperature electron mobility can be achieved. The tuning of the electron mobility with the external electric field or InxGa1-xN channel can be useful for the design of GaN-based fieldeffect transistors and optoelectronic devices.